Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM-Reference-Cited by-同舟云学术

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Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM

Published:2007-04 Issue:3 Volume:138 Page:219-223
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Jia Ze,Ren Tian-ling,Liu Tian-zhi,Hu Hong,Zhang Zhi-gang,Xie Dan,Liu Li-tian

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Current status and challenges of ferroelectric memory devices

2. Effect of RuO2 growth temperature on ferroelectric properties of RuO2/Pb(Zr, Ti)O3/RuO2/Pt capacitors

3. Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395 °C

4. Characteristics of Pb(Zr,Ti)O3 thin films deposited on Ru/RuO2 double layer

5. Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes

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3. Combinatorial high-throughput optical screening for optimum composition of highly active ruthenium based ternary catalysts in oxygen reduction reaction;International Journal of Hydrogen Energy;2015-09

4. Bibliography;Non-Volatile Memories;2014-12-05

5. Process Crystallographic Simulation for Biocompatible Piezoelectric Material Design and Generation;Archives of Computational Methods in Engineering;2013-05-09

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