Optical properties of gas source MBE grown AlInP on GaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Over 30% efficient InGaP/GaAs tandem solar cells
2. GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells
3. Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer
4. 630-nm n-type Modulation-doped AlGaInP-AlInP multiquantum-well light-emitting diode
5. Conduction Bands in In1−xAlxP
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge separation in subcells of triple-junction solar cells revealed by time-resolved photoluminescence spectroscopy;Optics Express;2015-11-06
2. Dielectric functions and interband transitions of InxAl1 − xP alloys;Current Applied Physics;2014-09
3. Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires;Semiconductor Science and Technology;2013-09-10
4. Electrical transport and optical model of GaAs-AlInP core-shell nanowires;Journal of Applied Physics;2012-05
5. Gas source MBE grown Al0.52In0.48P photovoltaic detector;Journal of Crystal Growth;2011-05
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