Energy gaps and lattice dynamic properties of InAsxSb1−x
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Band parameters for III–V compound semiconductors and their alloys
2. 4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbxstrained layer superlattices
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4. Molecular beam epitaxial growth and optical properties of InAs1−xSbxin 8–12 μm wavelength range
5. InAsSb/InAs: A type-I or a type-II band alignment
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1. Temperature effects on thermodynamic and mechanical properties of the InP, InAs and InSb compounds;Modern Physics Letters B;2023-07-07
2. Response of mechanical and optoelectronic properties for InPxAsySb1–x–y/InAs system to composition;Journal of the Korean Physical Society;2022-07-20
3. Influence of pressure and temperature on mechanical and thermal behaviors of InAsSb and GaAsSb alloys;Physica Scripta;2021-11-02
4. Uncertainty in the estimation of the InAs1−xSbx intrinsic carrier concentration;Infrared Physics & Technology;2021-09
5. InAsSb-Based Infrared Photodetectors: Thirty Years Later On;Sensors;2020-12-09
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