The role of deep level traps in barrier height of 4H–SiC Schottky diode-Reference-Cited by-同舟云学术

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The role of deep level traps in barrier height of 4H–SiC Schottky diode

Published:2012-09 Issue:15 Volume:177 Page:1323-1326
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zaremba G.,Adamus Z.,Jung W.,Kamińska E.,Borysiewicz M.A.,Korwin-Mikke K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiC

2. Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

3. Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes

4. Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy

5. Isothermal frequency scan DLTS

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1. Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress;IEEE Transactions on Power Electronics;2024-11

2. Research status and progress of metal contacts of SiC power devices;Acta Physica Sinica;2021

3. DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions;Materials Science in Semiconductor Processing;2018-02

4. Local non invasive study of SiC diodes with abnormal electrical behavior;Solid-State Electronics;2015-11

5. Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS;Solid-State Electronics;2014-09

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