Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Raised Ge-Source with n+ pocket and recessed drain line TFET: A proposal for biosensing applications;Materials Science and Engineering: B;2024-08
2. Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review;Sensing and Bio-Sensing Research;2024-06
3. Effects of the remnant polarization on the electrical characteristics of steeper sub-threshold swing Fe-GeFinFET;Materials Science and Engineering: B;2024-05
4. Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N+ pocket as label free biosensors;Physica Scripta;2024-03-14
5. Fringe-fields-modulated double-gate tunnel-FET biosensor;Scientific Reports;2024-01-02
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