Synthesis and optical characterization of erbium-doped III-N double heterostructures-Reference-Cited by-同舟云学术

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Synthesis and optical characterization of erbium-doped III-N double heterostructures

Published:2003-12 Issue:1-3 Volume:105 Page:118-121
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zavada J.M.,Lin J.Y.,Jiang H.X.,Chow P.,Hertog B.,Hömmerich U.,Nyein Ei Ei,Jenkinson H.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

2. Er doping of GaN during growth by metalorganic molecular beam epitaxy

3. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

4. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN;Journal of Physics D: Applied Physics;2021-03-30

2. Synthesis and photoluminescence properties of erbium-doped BaF2 nanoparticles;Chemical Physics Letters;2004-03

3. Electroluminescent properties of erbium-doped III–N light-emitting diodes;Applied Physics Letters;2004-02-16

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