1. H. Bender, T. Conard, H. Nohira, J. Petry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, J.W. Maes, in: M. Hirose, S. Sakai, H. Iwai (Eds.), Extended Abstracts of International Workshop on Gate Insulator, Business Center for Academic Societies Japan, Tokyo, 2001, pp. 86–92.
2. H. Bender, T. Conard, O. Richard, B. Brijs, J. Pétry, W. Vandervorst, C. Defranoux, P. Boher, N. Rochat, C. Wyon, P. Mack, J. Wolstenholme, R. Vitchev, L. Houssiau, J-J. Pireaux, A. Bergmaier, G. Dollinger, in: Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, ECS PV 2003-03, Electrochemical Society, Pennington, 2003, pp. 223–232.
3. Atomic layer epitaxy
4. P. Boher, C. Defranoux, S. Bourtauld, J.P. Piel, H. Bender, in: Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, ECS PV 2003-03, Electrochemical Society, Pennington, 2003, pp. 305–315.
5. P. Boher, C. Defranoux, H. Bender, Mater. Sci. Eng. B (2003), this volume.