Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition-Reference-Cited by-同舟云学术

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Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition

Published:2020-09 Issue: Volume:259 Page:114579
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Shengurov V.G.,Denisov S.A.,Yu. Chalkov V.,Filatov D.O.,Kudrin A.V.,Sychyov S.M.,Trushin V.N.,Zaitsev A.V.,Titova A.M.,Alyabina N.A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Ge-on-Si photonic devices for photonic-electronic integration on a Si platform;Ishikawa;IEICE Electronics Express.,2014

2. Germanium: Epitaxy and its applications;Bosi;Prog. Cryst. Growth Charact. Mater.,2010

3. B incorporation in Ge(001) grown by gas-source molecular beam epitaxy from Ge2H6 and B2H6;Lu;J. Appl. Phys.,1995

4. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes;Hartmann;J. Cryst. Growth.,2005

5. Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition;Mukherjee;Appl. Phys. Lett.,2001

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidating liquid metal interface integrated capacitive pressure detection;Science China Technological Sciences;2023-05-17

2. High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates;physica status solidi (RRL) – Rapid Research Letters;2021-10-20

3. Interfacial Engineering of Room Temperature Liquid Metals;Advanced Materials Interfaces;2021-01-25

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