Preparation and resistive switching properties of ZrO2 films with large room-temperature ferromagnetism-Reference-Cited by-同舟云学术

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Preparation and resistive switching properties of ZrO2 films with large room-temperature ferromagnetism

Published:2024-03 Issue: Volume:301 Page:117177
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Xu Qin,Duan Sutian,Wang Zhijun,Lan Tian,Liu Lihu,Sun Huiyuan

Funder

China Scholarship Council

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Publisher

Elsevier BV

Reference39 articles.

1. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices;Shi;Adv. Mater.,2021

2. Nano-structured dilute magnetic semiconductors for efficient spintronics at room temperature;Gupta;Magnetochemistry.,2020

3. Defect-rich dopant-free ZrO2 nanostructures with superior dilute ferromagnetic semiconductor properties;Rahman;J. Am. Chem. Soc.,2016

4. Development of a chemiluminescence ethanol sensor based on nanosized ZrO2;Zhang;Analyst.,2002

5. Highly sensitive gas sensor based on stabilized zirconia and CdMoO4 sensing electrode for detection of acetone;Liu;Sensor. Actuat. B-Chem.,2017

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