Comprehensive modeling of ion-implant amorphization in silicon-Reference-Cited by-同舟云学术

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Comprehensive modeling of ion-implant amorphization in silicon

Published:2005-12 Issue: Volume:124-125 Page:383-385
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mok K.R.C.,Jaraiz M.,Martin-Bragado I.,Rubio J.E.,Castrillo P.,Pinacho R.,Srinivasan M.P.,Benistant F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Atomistic modeling of amorphization and recrystallization in silicon

2. Microscopic Description of the Irradiation-Induced Amorphization in Silicon

3. Ion-beam processing of silicon at keV energies: A molecular-dynamics study

4. Slowing-down time of energetic atoms in solids

5. Simulation of Semiconductor Processes and Devices 2001;Jaraiz,2001

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Yield enhancement using source/drain BF2⁺ implant process optimization;2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2010-07

2. Physically based modeling of dislocation loops in ion implantation processing in silicon;Materials Science and Engineering: B;2005-12

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