Charge imbalance at oxide interfaces: How nature deals with it-Reference-Cited by-同舟云学术

Charge imbalance at oxide interfaces: How nature deals with it

Published:2007-11 Issue:1-3 Volume:144 Page:1-6
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Maurice J.-L.,Devos I.,Casanove M.-J.,Carrétéro C.,Gachet G.,Herranz G.,Crété D.-G.,Imhoff D.,Barthélémy A.,Bibes M.,Bouzehouane K.,Deranlot C.,Fusil S.,Jacquet É.,Domengès B.,Ballutaud D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Origin of the dielectric dead layer in nanoscale capacitors

2. Polar heterojunction interfaces

3. Polar oxide surfaces

4. On the origin of the electrical activity in silicon grain boundaries

5. Electrical properties of grain boundaries in polycrystalline compound semiconductors

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