Properties of AlN epitaxial layers on 6H–SiC substrate grown by sublimation in argon, nitrogen, and their mixtures-Reference-Cited by-同舟云学术

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Properties of AlN epitaxial layers on 6H–SiC substrate grown by sublimation in argon, nitrogen, and their mixtures

Published:2006-04 Issue:1-3 Volume:129 Page:228-231
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Beshkova M.,Zakhariev Z.,Abrashev M.V.,Birch J.,Postovit A.,Yakimova R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Epitaxially grown AlN and its optical band gap

2. GaN, AlN, and InN: A review

3. Nonmetallic crystals with high thermal conductivity

4. Proceedings of the XXVI Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe;Beshkov,2002

5. Sublimation growth and characterization of bulk aluminum nitride single crystals

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance Photodetectors Using a 2D MoS2/3D-AlN Structure;ACS Applied Electronic Materials;2021-11-23

2. Properties and potential applications of two-dimensional AlN;Vacuum;2020-06

3. Atomic layer deposition of AlN using trimethylaluminium and ammonia;Journal of Physics: Conference Series;2020-04-01

4. Initial conditions for preparation of thin AlN films by atomic layer deposition;Journal of Physics: Conference Series;2020-04-01

5. Effect of residual H 2 O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH 3;Applied Surface Science;2014-09

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