The effect of the rapid thermal annealing on the interdiffusion and the reaction at the interface of the binary system Cr/Si-Reference-Cited by-同舟云学术

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The effect of the rapid thermal annealing on the interdiffusion and the reaction at the interface of the binary system Cr/Si

Published:2004-12 Issue: Volume:114-115 Page:214-217
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Merabet A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. VLSI Science and Technology;d’Heurle,1982

2. VLSI Electronics Microstructure Science, vol. 6;Nicolet,1983

3. Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’

4. Lattice and grain boundary self‐diffusion in Ni2Si: Comparison with thin‐film formation

5. Intermetallic compound formation in thin‐film and in bulk samples of the Ni‐Si binary system

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1. Amorphous to Polycrystalline Phase Transition in La ₂ O ₃ Films Grown on a Silicon Substrate Forming Si‐Doped La ₂ O ₃ Films;physica status solidi (a);2022-10-07

2. Real-Time Observations of Interfacial Lithiation in a Metal Silicide Thin Film;The Journal of Physical Chemistry C;2012-10-11

3. Effects of vacuum sintering temperature on mechanical properties and electric resistance for Cr50–Si50 optical target;Powder Metallurgy;2011-07

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