Characterization of silicon carbide thin films grown on Si and SiO2/Si substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Gary L. Harris (Ed.), Properties of Silicon Carbide, IEE emis Datareviews No. 13, 1995.
2. Growth at High Rates and Characterization of Bulk 3C-SiC Material
3. Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates
4. Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
5. Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD
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3. Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum;Physics of the Solid State;2011-09
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