Si self-diffusivity using isotopically pure 30Si epitaxial layers-Reference-Cited by-同舟云学术

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Si self-diffusivity using isotopically pure 30Si epitaxial layers

Published:2004-12 Issue: Volume:114-115 Page:330-333
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Aid S.R.,Sakaguchi T.,Toyonaga K.,Nakabayashi Y.,Matumoto S.,Sakuraba M.,Shimamune Y.,Hashiba Y.,Murota J.,Wada K.,Abe T.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Self Diffusion in Intrinsic Silicon

2. SILICON SELF‐DIFFUSION

3. Self‐Diffusion in Intrinsic and Extrinsic Silicon

4. Point defects, diffusion processes, and swirl defect formation in silicon

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2. Microstructural and thermal property evolution of reaction bonded silicon carbide (RBSC);Journal of Alloys and Compounds;2018-10

3. Self-diffusion in single crystalline silicon nanowires;Journal of Applied Physics;2018-04-28

4. Point Defects and Diffusion in Semiconductors;Handbook of Solid State Diffusion, Volume 1;2017

5. Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C;Physical Review B;2016-09-29

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