Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. High-performance single-mode VCSELs in the 1310-nm waveband
2. 1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs
3. 1.55-<tex>$mu$</tex>m Optically Pumped Wafer-Fused Tunable VCSELs With 32-nm Tuning Range
4. 1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding
5. Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses;Advances in Materials Science and Engineering;2017
2. Curvature determination of embedded silicon chips byin siturocking curve X-ray diffraction measurements at elevated temperatures;Powder Diffraction;2016-09-28
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