Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses-Reference-Cited by-同舟云学术

Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses

Published:2017 Issue: Volume:2017 Page:1-8
ISSN:1687-8434
Container-title:Advances in Materials Science and Engineering
language:en
Short-container-title:Advances in Materials Science and Engineering

Author:

Qiu Yuanying¹^ORCID,Qiu Xun²,Guo Xianghu¹^ORCID,Wang Dian¹^ORCID,Sun Lijie²

Affiliation:

1. Key Laboratory of Electronic Equipment Structure Design, Ministry of Education, Xidian University, Xi’an 710071, China

2. Shanghai Institute of Space Power Sources, Shanghai 200245, China

Abstract

In order to effectively reduce the thermal stresses of Si/GaAs bonding wafers during their annealing process, first of all, based on E. Suhir’s bimaterial thermal stress theory, the thermal stresses in the wafer bonding interfaces are analyzed and the thermal stress distribution formulas are obtained. Then, the thermal stress distribution curves of Si/GaAs bonding interfaces are investigated by finite element method (FEM) and are compared with the results from E. Suhir’s bimaterial thermal stress theory. Finally, some effective strategies are proposed to reduce the thermal stresses in the bonding interfaces.

Funder

Shanghai Rising-Star Program

Publisher

Hindawi Limited

Subject

General Engineering,General Materials Science

Link

http://downloads.hindawi.com/journals/amse/2017/4903924.pdf

Reference17 articles.

1. Stresses in Bi-Metal Thermostats

2. Analysis of thermal stress in wafer bonding of dissimilar materials for the introduction of an InP-based light emitter into a GaAs-based three-dimensional photonic crystal

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