Cavities at the Si projected range by high dose and energy Si ion implantation in Si-Reference-Cited by-同舟云学术

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Cavities at the Si projected range by high dose and energy Si ion implantation in Si

Published:2009-03 Issue: Volume:159-160 Page:153-156
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Canino M.,Regula G.,Lancin M.,Xu M.,Pichaud B.,Ntzoenzok E.,Barthe M.F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Point defects and dopant diffusion in silicon

2. Microscopical aspects of boron diffusion in ultralow energy implanted silicon

3. Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

4. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01

2. Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon;Philosophical Magazine;2011-12

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