Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Semiconductor Silicon 1981;Kugimiga,1981
2. Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
3. Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) –Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping–
4. Gettering mechanisms in silicon
5. Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sample thickness effect of thermal vibration correction within X-ray dynamical theory for germanium-doped silicon;Journal of Applied Physics;2017-03-28
2. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon;Chinese Physics Letters;2011-03
3. Research on efficiency limiting defects and defect engineering in silicon solar cells - results of the German research cluster SolarFocus;physica status solidi (c);2010-12-22
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