Light-beam-induced current measurements on copper–nickel co-contaminated Cz-silicon bicrystals
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Electron microscope study of electrically active impurity precipitate defects in silicon
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1. Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current;physica status solidi (b);2021-07-08
2. Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski silicon;Journal of Semiconductors;2013-10
3. Transmission electron microscopy analysis of extended defects in multicrystalline silicon using in-situ EBIC/FIB sample preparation;physica status solidi (c);2012-12-05
4. Gettering Processes and the Role of Extended Defects;Advanced Silicon Materials for Photovoltaic Applications;2012-06-13
5. The silicon-rich corner of the system Si–Cu–Co;Energy Procedia;2011
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