Numerical modeling of stress build up during nickel silicidation under anisothermal annealing-Reference-Cited by-同舟云学术

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Numerical modeling of stress build up during nickel silicidation under anisothermal annealing

Published:2006-11 Issue:2 Volume:135 Page:95-102
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cacho Florian,Cailletaud Georges,Rivero Christian,Gergaud Patrice,Thomas Olivier,Jaouen Herve

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. The impact of intrinsic series resistance on MOSFET scaling

2. A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

3. Silicide formation in Ni-Si Schottky barrier diodes

4. Interactions in the Co/Si thin‐film system. I. Kinetics

5. Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

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1. Low-Temperature Interdiffusion and Ordered Phase Formation in Au/Cu Nanocrystalline Thin Films at the Different Atmospheres;METALLOFIZIKA I NOVEISHIE TEKHNOLOGII;2016-09-08

2. Thermal Stability Improvement Induced by Laser Annealing for 50-Å Ni(Pt) Film Silicidation;IEEE Transactions on Electron Devices;2016-02

3. Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01

4. Controlled formation and resistivity scaling of nickel silicide nanolines;Nanotechnology;2009-02-02

5. Interdiffusion, phase formation, and stress development in Cu–Pd thin-film diffusion couples: Interface thermodynamics and mechanisms;Journal of Applied Physics;2008-06

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