Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal-Reference-Cited by-同舟云学术

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Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal

Published:2006-10 Issue:2-3 Volume:134 Page:244-248
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ganchenkova M.G.,Nicolaysen S.,Borodin V.A.,Halvorsen E.,Nieminen R.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

2. Free-energy calculations of intrinsic point defects in silicon

3. First-principles study of the structure and energetics of neutral divacancies in silicon

4. First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

5. Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon

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1. Sensitivity of CoSi2 precipitation in silicon to extra-low dopant concentrations. II. First-principles calculations;Journal of Applied Physics;2015-01-28

2. Sensitivity of CoSi2 precipitation in silicon to extra-low dopant concentrations. I. Experiment;Journal of Applied Physics;2015-01-28

3. Molecular dynamics simulation of annealing of post-ballistic cascade remnants in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07

4. Synergetic effects of dual-beam implantation on the microstructural development in silicon;Physical Review B;2011-10-28

5. Strain effects on the stability and structure of vacancy clusters in Si: A first-principles study;Physical Review B;2010-06-15

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