Author:
Martin P.,Ligeon E.,Gailliard J.P.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Irradiation fluence dependent microstructural evolution of porous InSb;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
2. Ion Implantation Damage and Annealing in GaSb;MRS Proceedings;1993
3. Anomalous behavior of ion‐implanted GaSb;Applied Physics Letters;1991-10-07
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Changes in InSb as a result of ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03