Channeling analysis of thermally nitrided silicon-Reference-Cited by-同舟云学术

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Channeling analysis of thermally nitrided silicon

Published:1983-12 Issue:1-3 Volume:218 Page:589-592
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Amano Jun,Ekstedt Tom

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface

2. Studies of the Si‐SiO2interface by MeV ion channeling

3. (100) and (110) SiSiO2 interface studies by MeV ion backscattering

4. Materials analysis by ion channeling;Felman,1982

5. Characterization of low‐pressure chemical‐vapor‐deposited and thermally‐grown silicon nitride films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-03

2. Analysis technology for VLSI fabrication;Proceedings of the IEEE;1987

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