Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module
Author:
Publisher
Elsevier BV
Subject
Industrial and Manufacturing Engineering,Energy Engineering and Power Technology
Reference41 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. GaN-Based RF Power Devices and Amplifiers
3. An assessment of wide bandgap semiconductors for power devices
4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
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