A Review of High Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
http://xplorestaging.ieee.org/ielx7/6245517/6507303/09999240.pdf?arnumber=9999240
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mechanism Analysis and Oscillation Suppression of the False Triggering Oscillation for Parallel-Connected GaN Devices;IEEE Transactions on Power Electronics;2024-11
2. Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module;Microelectronics Reliability;2024-10
3. Experimental and Simulated Verification of Power Cycling Reliability for Thin and Low Warpage Power Modules;IEEE Transactions on Power Electronics;2024-10
4. What is Needed to Promote the Spread of GaN~The Key is Unprecedented Cross-Company Collaboration~;Journal of The Japan Institute of Electronics Packaging;2024-09-01
5. Selecting Temperature Sensitive Parameter for a Transient Thermal Impedance Measurements of E-Mode Power GaN HEMT;2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2024-06-24
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