A predictive model for wafer probe burn phenomenon-Reference-Cited by-同舟云学术

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A predictive model for wafer probe burn phenomenon

Published:2016-04 Issue: Volume:98 Page:610-616
ISSN:1359-4311
Container-title:Applied Thermal Engineering
language:en
Short-container-title:Applied Thermal Engineering

Author:

Zafer Baha,Tunaboylu Bahadır

Funder

European Union Seventh Framework Programme

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Energy Engineering and Power Technology

Reference14 articles.

1. International Technology Roadmap for Semiconductors, ITRS;Wolfgang,2009

2. Wafer probe acquires a new importance in testing;Allison,2005

3. Vertical probe development for copper probing challenges;Tunaboylu,2003

4. Measuring current carrying capability (CCC) of vertical probes;Kazmi,2010

5. Testing of copper pillar bumps for wafer sort;Tunaboylu;IEEE Trans. Compon. Packaging Manuf. Technol,2012

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of New Au–NiCo MEMS Vertical Probe for Fine-Pitch Wafer-Level Probing;Crystals;2021-04-26

2. Study on Estimation Method for Maximum Temperature of Multi-layered Micro-probe by Joule-Heating;International Journal of Precision Engineering and Manufacturing;2020-08-14

3. Finite element analysis of vertical micro-probe considering Joule-heating effect;International Journal of Fatigue;2017-08

4. An Electromechanical Model and Simulation for Test Process of the Wafer Probe;IEEE Transactions on Industrial Electronics;2017-02

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