High detectivity Pb0.8Sn0.2Te-PbSe0.08Te0.92 heterostructure photodiodes-Reference-Cited by-同舟云学术

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High detectivity Pb0.8Sn0.2Te-PbSe0.08Te0.92 heterostructure photodiodes

Published:1992-01 Issue:4 Volume:33 Page:275-280
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Chishko V.F.,Hryapov V.T.,Kasatkin I.L.,Osipov V.V.,Smolin O.V.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. L.H. DeVaux, H. Kimura, M.I. Sheets, F.I. Renda, I.R. Balon, P.S. Chia and A.H. Lockwood, Infrared Phys. 15, 271–277.

2. Performance of PbSnTe diodes at moderately reduced backgrounds

3. Carrier transport mechanisms and photoelectrical properties of PbSnTe/PbTeSe heterojunctions

4. Detectivity limits for diffused junction PbSnTe detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors;Journal of Electronic Materials;2020-04-09

2. LEAD COMPOUNDS;Compound Semiconductor Bulk Materials and Characterizations;2012-12

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