Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions-Reference-Cited by-同舟云学术

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Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions

Published:1986-07 Issue:4 Volume:26 Page:247-261
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Haegel N.M.,Haller E.E.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Excitation spectra of group-II acceptors in Ge: Ge(Be0), Ge(Be−), and Ge(Mg0)

2. Performance and materials aspects of Ge:Be photoconductors

3. Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors

4. Recombination processes in far infrared photoconductors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Slow transient response of Ge:Ga far-infrared photoconductors for space applications;Infrared Physics & Technology;1999-10

2. Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of1×1014cm-3;Japanese Journal of Applied Physics;1997-07-15

3. Transient response in doped germanium photoconductors under very low background operation;Applied Optics;1996-04-01

4. Advanced far-infrared detectors;Infrared Physics & Technology;1994-03

5. Calibration and performance of doped-Ge photoconductors for the ISO Long Wavelength Spectrometer;Infrared Physics;1993-08

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