Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of1×1014cm-3-Reference-Cited by-同舟云学术

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Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of1×1014cm-3

Published:1997-07-15 Issue:Part 1, No. 7A Volume:36 Page:4262-4266
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujiwara Mikio,Hiromoto Norihisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved optical properties and detectivity of an uncooled silicon carbide mid-wave infrared optical detector with increased dopant concentration;Journal of Optics;2012-09-21

2. Terahertz Imaging;Springer Series in Optical Sciences;2011-07-29

3. Spectroscopic Methods;Springer Series in Optical Sciences;2011-07-29

4. Detectors;Springer Series in Optical Sciences;2011-07-29

5. Sources;Springer Series in Optical Sciences;2011-07-29

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