Development of selenium-doped silicon for 3–5 μm applications-Reference-Cited by-同舟云学术

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Development of selenium-doped silicon for 3–5 μm applications

Published:1979-01 Issue:1 Volume:19 Page:93-102
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Vydyanath H.R.,Helm W.J.,Lorenzo J.S.,Hoelke S.T.

Publisher

Elsevier BV

Subject

General Engineering

Reference2 articles.

1. Helm, W.J. & H.R. Vydyanath, Materials for MOSIS FLIR, Phase I Aerojet ElectroSystems Co. Final technical report to U.S. Army Mobility Equipment Research and Development Command, Army Night Vision and Electro-Optics Laboratories, Fort Belvoir, Virginia 22060 under contract DAAG53-76-C-0209.

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2. Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications;Photonic Sensors;2015-03-03

3. The role of diffusion in broadband infrared absorption in chalcogen-doped silicon;Applied Physics A;2009-03-25

4. Chalcogens;Computational Microelectronics;2004

5. Electronic structure of substitutional chalcogen impurities in silicon;Physical Review B;1983-04-15

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