Photovoltaic properties of thermally-grown selenium-doped silicon photodiodes for infrared detection applications

Author:

Hammadi Oday A.

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. R. A. Ismail, O. A. Abdulrazaq, A. A. Hadi, and O. A. Hamadi, “Characterization of Si p-n photodetectors produced by laser-induced diffusion,” International Journal of Modern Physics, 2005, 19(31): 4619–4628.

2. O. A. Hamadi and K. Z. Yahiya, “Physics: heterojunction detectors optical and electrical properties of selenium-antimony heterojunction formed on silicon substrate,” University of Sharjah Journal of Pure and Applied Sciences, 2007, 4(2): 1–11.

3. O. A. Hamadi, “Profiling of antimony diffusivity in silicon substrates using laser-induced diffusion technique,” Iraqi Journal of Applied Physics Letters, 2010, 3(1): 23–26.

4. P. A. R. Khan, S. M. Butta, and S. A. Malik, “Modeling of transport properties of amorphous silicon solar cells,” Iraqi Journal of Applied Physics Letters, 2010, 6(1): 25–32.

5. H. R. Vydyanath, J. S. Lorenzo, and F. A. Kroger, “Defect pairing diffusion, and solubility studies in selenium-doped silicon,” Journal of Applied Physics, 1978, 49(12): 5928–5937.

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