An operating regime based on switching effects for photodetectors of Pb1−xSnxTe(in) MBE films-Reference-Cited by-同舟云学术

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An operating regime based on switching effects for photodetectors of Pb1−xSnxTe(in) MBE films

Published:1993-08 Issue:4 Volume:34 Page:375-378
ISSN:0020-0891
Container-title:Infrared Physics
language:en
Short-container-title:Infrared Physics

Author:

Akimov B.A.,Ryabova L.I.,Shumskiy V.N.,Petikov N.I.

Publisher

Elsevier BV

Subject

General Engineering

Reference6 articles.

1. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

2. Lead telluride-based photodetectors: a new approach

3. Impurity Photoconductivity and Electrical Properties of Pb1−x−yGexSnyTe Doped with Indium

4. High sensitivity photoresistors based on homogeneous Pb1−x−ySnxGeyTe:In epitaxial films

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of electron trapping centers on electrical and photoelectric properties of PbSnTe : In;Optoelectronics, Instrumentation and Data Processing;2011-10

2. Oscillating transient currents in PbSnTe:In in a backgroundless mode;Russian Microelectronics;2011-03

3. Terahertz imaging system components based on PbSnTe: In films;Optoelectronics, Instrumentation and Data Processing;2009-08

4. Photosensitivity of Pb1 − x Sn x Te:In films in the region of intrinsic absorption;Semiconductors;2008-02

5. DOPED LEAD TELLURIDE-BASED SEMICONDUCTORS: NEW POSSIBILITIES FOR DETECTION OF TERAHERZ RADIATION;International Journal of Modern Physics B;2004-06-30

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