Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M=Ni, Cu, Pt) precursors-Reference-Cited by-同舟云学术

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Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M=Ni, Cu, Pt) precursors

Published:2000-04 Issue:3 Volume:157 Page:151-158
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Utriainen Mikko,Kröger-Laukkanen Minna,Johansson Leena-Sisko,Niinistö Lauri

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Copper metallization for ULSL and beyond

2. Selected-area deposition of multiple active films for conductometric microsensor arrays

3. Principles of Catalyst Development;Richardson,1992

4. Mechanistic studies of copper thin-film growth from CuI and CuII .beta.-diketonates

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1. Nature of metal–bis( β -diketonate) bonds in TM(acac’) ₂ (acac’ = acetylacetonate, hexafluoroacetylacetonate, hexamethylacetylacetonate; TM = Ni(II), Pd(II), Pt(II)) complexes: A density functional theory investigation;Molecular Physics;2024-08-13

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