Ion time-of-flight analysis of ultrashort pulsed laser-induced processing of Al2O3-Reference-Cited by-同舟云学术

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Ion time-of-flight analysis of ultrashort pulsed laser-induced processing of Al2O3

Published:2000-09 Issue:1 Volume:165 Page:44-55
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Stoian R,Varel H,Rosenfeld A,Ashkenasi D,Kelly R,Campbell E.E.B

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Time resolved detection of particle removal from dielectrics on femtosecond laser ablation

2. Material removal dynamics after femtosecond laser pulse excitation of dielectrics;Rosenfeld,1998

3. Nanosecond-to-femtosecond laser-induced breakdown in dielectrics

4. Laser‐induced breakdown by impact ionization in SiO2with pulse widths from 7 ns to 150 fs

5. Short-Pulse Laser Damage in Transparent Materials as a Function of Pulse Duration

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