Growth temperature effect on the heteroepitaxy of InSb on Si(111)-Reference-Cited by-同舟云学术

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Growth temperature effect on the heteroepitaxy of InSb on Si(111)

Published:2000-06 Issue: Volume:159-160 Page:335-340
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rao B.V,Okamoto T,Shinmura A,Gruznev D,Mori M,Tambo T,Tatsuyama C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. 58 X 62 Insb Focal Plane Array For Infrared Astronomy

2. Properties of MBE grown InSb and InSb1−xBix

3. Deposition of indium antimonide films by metalorganic magnetron sputtering

4. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition

5. Interface formation and growth of InSb on Si(100)

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Thin Films of InSb on Pristine and Modified Si(111) Using Solid Phase Epitaxy;Bulletin of the Russian Academy of Sciences: Physics;2023-12

2. Effect of The Cu Doping on The Structural and Optical Properties of AlSb Thin Films Deposited by Thermal Evaporation Method;Journal of Physics: Conference Series;2021-05-01

3. Fabrication and characterization of n- InSb Heterojunction for optoelectronic device;Energy Procedia;2019-01

4. Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals for Infrared Detector Applications;Springer Handbook of Crystal Growth;2010

5. Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy;Microelectronics Journal;2008-02

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