On the growth of Fe2As grains at the interface of the Fe/AlxGa1−xAs (x = 0.25) system-Reference-Cited by-同舟云学术

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On the growth of Fe2As grains at the interface of the Fe/AlxGa1−xAs (x = 0.25) system

Published:2001-03 Issue:3-4 Volume:172 Page:265-275
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Monteverde F,Michel A,Eymery J.-P,Desoyer J.-C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Molecular beam epitaxial growth of single‐crystal Fe films on GaAs

2. X-ray characterization of single-crystal Fe films on GaAs grown by molecular beam epitaxy

3. Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy

4. Electronic analog of the electro‐optic modulator

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1. Fe-Al thin walls manufactured by Laser Engineered Net Shaping;Journal of Alloys and Compounds;2017-03

2. Morphology evolution mechanism of single tracks of FeAl intermetallics in selective laser melting;Materials Research Innovations;2012-10

3. Fabrication and microstructure characterization of selective laser‐melted FeAl intermetallic parts;Surface and Coatings Technology;2012-06

4. Growth of Fe–As crystalline films on GaAs(100) by molecular beam epitaxy;Thin Solid Films;2008-03

5. Submonolayer growth of Fe on aGaAs(100)−2×6reconstructed surface;Physical Review B;2005-09-01

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