Growth of Fe–As crystalline films on GaAs(100) by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of Fe–As crystalline films on GaAs(100) by molecular beam epitaxy

Published:2008-03 Issue:10 Volume:516 Page:3015-3019
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jamil A.T.M.K.,Noguchi H.,Munekata H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Molecular beam epitaxial growth of single‐crystal Fe films on GaAs

2. Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy

3. X-ray characterization of single-crystal Fe films on GaAs grown by molecular beam epitaxy

4. Structure and magnetism of the Fe/GaAs interface

5. Magnetism of Fe thin layers on GaAs (001)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth, crystal structures, and magnetic properties of Fe–As films grown on GaAs (111)B substrates by molecular beam epitaxy;Journal of Applied Physics;2023-12-20

2. Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron;Russian Physics Journal;2018-07

3. Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics;Nanostructure Science and Technology;2018

4. Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs;Journal of Applied Physics;2013-07-21

5. Effect of thermal annealing of high temperature growth [(GaAs) m (Fe) n ] p composite films on GaAs(001) by molecular beam epitaxy;Indian Journal of Physics;2011-05

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