FT-IR-ATR study of depth profile of SiO2 ultra-thin films-Reference-Cited by-同舟云学术

FT-IR-ATR study of depth profile of SiO2 ultra-thin films

Published:2001-03 Issue:3-4 Volume:172 Page:307-311
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nagai N.,Hashimoto H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. J.R. Shallenberger, D.A. Cole, D.F. Downey, Z. Zhao, in: J. Matsuo, G. Takaoka, I. Yamada (Eds.), Proceedings of International Conference on Ion Implantation Technology, IEEE, 1998.

2. Surface Studies of Solids by Total Reflection of X-Rays

3. High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment

4. Mechanistic studies of silicon oxidation

5. Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling onSi(100)−(2×1)

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