Mechanistic studies of silicon oxidation-Reference-Cited by-同舟云学术

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Mechanistic studies of silicon oxidation

Published:1999 Issue:4 Volume:17 Page:1795
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Weldon M. K.,Queeney K. T.,Chabal Y. J.,Stefanov B. B.,Raghavachari K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain Activation of Surface Chemistry on H-Terminated Si(111);The Journal of Physical Chemistry C;2021-09-07

2. An Unexpected Role of H During SiC Corrosion in Water;The Journal of Physical Chemistry C;2020-04-02

3. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure;Applied Surface Science;2016-10

4. Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy;Chemistry of Materials;2015-07-13

5. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry;Applied Surface Science;2015-01

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