An X-ray diffraction study of oxide removal from InSb(001) substrates-Reference-Cited by-同舟云学术

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An X-ray diffraction study of oxide removal from InSb(001) substrates

Published:1998-01 Issue: Volume:123-124 Page:141-145
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jones N.,Norris C.,Nicklin C.L.,Steadman P.,Taylor J.S.G.,McConville C.F.,Johnson A.D.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. 7th Int. Conf. Narrow Gap Semiconductors;Liu,1995

2. Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

3. Elevated temperature low energy ion cleaning of GaAs

4. Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation

5. 7th Int. Conf. Narrow Gap Semiconductors;Johnson,1995

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1. Influence of Dry and Wet Etching on AlInSb Contact Resistivity, Transfer Length, and Sheet Resistance Using Circular Transmission Model;Journal of Electronic Materials;2023-01-20

2. Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy;Applied Surface Science;2015-11

3. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation;Applied Surface Science;2013-07

4. Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors;Journal of Electronic Materials;2008-05-01

5. Desorption of InSb(001) native oxide and surface smoothing induced by low temperature annealing under molecular hydrogen flow;Journal of Applied Physics;2007-01-15

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