Theoretical investigations of stable growth sites on GaAs(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
2. Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy
3. Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: ab initio based microscopic calculation
4. A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)- (2× 4) Surface
5. A Theoretical Investigation of Migration Potentials of Ga Adatoms near Step Edges on $\bf GaAs(001)\mbox{-}\mbi{c}(4\times 4)$ Surface
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1. Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms;Journal of Crystal Growth;2007-06
2. Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfaces;Progress in Surface Science;2001-02
3. Atomistic simulation of epitaxial growth processes;Advances in Crystal Growth Research;2001
4. Relevance of surface reconstruction to specular RHEED intensity on GaAs(001);Physical Review B;2000-09-15
5. Surface segregation in ternary alloys: a BFS study of Ni–Al–Cu(100) surface composition;Applied Surface Science;1999-01
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