Growth and electronic structure of dy silicide on Si(111)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth and electronic structure of dy silicide on Si(111)

Published:1998-01 Issue: Volume:123-124 Page:100-103
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Vandré S.,Kalka T.,Preinesberger C.,Manke I.,Eisele H.,Dähne-Prietsch M.,Meier R.,Weschke E.,Kaindl G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. The formation of silicides from thin films of some rare‐earth metals

2. Low Schottky barrier of rare‐earth silicide onn‐Si

3. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon

4. Contact reaction between Si and rare earth metals

5. Surface crystallography ofYSi2−xfilms epitaxially grown on Si(111): An x-ray photoelectron diffraction study

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial stages of Lutetium growth on Si (111)-7 × 7 probed by STM and core-level photoelectron spectroscopy;Surface Science;2017-09

2. Solid phase epitaxial growth of Dy-germanide films on Ge(001) substrates;Microelectronic Engineering;2011-04

3. Phase selection in the rare earth silicides;Physical Review B;2010-11-15

4. Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction;Surface Science;2006-09

5. Growth and electronic structure of holmium silicides by STM and STS;Surface Science;2005-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3