New structural model for the Si(111)4×1–In reconstruction-Reference-Cited by-同舟云学术

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New structural model for the Si(111)4×1–In reconstruction

Published:1998-06 Issue: Volume:130-132 Page:96-100
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Saranin A.A,Zotov A.V,Ignatovich K.V,Lifshits V.G,Numata T,Kubo O,Tani H,Katayama M,Oura K

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Superstructures of submonolayer indium films on silicon (111)7 surfaces

2. Electron energy loss measurements of In/Si(111) superstructures: Correlation of the spectra with surface superstructures

3. Structure analysis of the single-domain Si(111)4 × 1-In surface by μ-probe Auger electron diffraction and μ-probe reflection high energy electron diffraction

4. Metal-induced reconstructions of the silicon(111) surface

5. Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low coverage Si(111)√7×√3–In reconstruction: Deposition rate effect;Applied Surface Science;2014-06

2. Indium Growth on Reconstructed Si(111)√3 × √3 and 4 × 1 In Surfaces;The Journal of Physical Chemistry C;2010-09-22

3. Angle-resolved high-resolution electron-energy-loss study of In-adsorbedSi(111)−(4×1)and -(8×2)surfaces;Physical Review B;2000-10-15

4. Spectroscopic signatures of a symmetry-breaking surface phase transition: Ag/Si (111);Surface Science;1999-09

5. SCANNING TUNNELING MICROSCOPY INVESTIGATION OF THE Si(103)- (1 × 1)–In SURFACE;Surface Review and Letters;1999-06

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