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Experimental determination of the inelastic mean free path of electrons in GaSb and InSb

  • Published:1999-04 Issue: Volume:144-145 Page:173-177
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Gergely G,Sulyok A,Menyhard M,Toth J,Varga D,Jablonski A,Krawczyk M,Gruzza B,Bideux L,Robert C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Surface excitation parameter for semiconducting III–V compounds;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04

4. Inelastic mean free paths of Ge in the range of 2–10 keV electron energy;Surface Science;2004-09

5. Energy dependence of electron inelastic mean free paths in bulk GaN crystals;Surface Science;2004-09
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