Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics-Reference-Cited by-同舟云学术

Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

Published:2003-06 Issue:1-4 Volume:216 Page:302-306
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ohshima C.,Taguchi J.,Kashiwagi I.,Yamamoto H.,Ohmi S.,Iwai H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. C. Hobbs et al., in: Proceedings of the Technical Digest of International Electron Devices Meeting, Washington, DC, Dec. 2–5, 2001, p. 651.

3. M. Koyama, K. Suguro, M. Yoshiki, Y. Kamimuta, M. Koike, M. Ohse, C. Hongo, A. Nishiyama, in: Proceedings of the Technical Digest of International Electron Devices Meeting, Washington, DC, Dec. 2–5, 2001, p. 459.

4. R. J. Carter et al., in: Proceedings of the Extended Abstract of International Workshop on Gate Insulator, Tokyo, Nov. 1–2, 2001, p. 100.

5. S. Ohmi, C. Kobayashi, K. Aizawa, S. Yamamoto, E. Tokumitsu, H. Ishiwara, H. Iwai, in: Proceedings of the 31st European Solid-State Device Research Conference, Nuremberg, Sept. 11–13, 2001, p. 235.

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