Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma-Reference-Cited by-同舟云学术

Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma

Published:2003-05 Issue: Volume:212-213 Page:197-200
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sakuraba Masao,Muto Daisuke,Seino Takuya,Murota Junichi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Atomically controlled processing for group IV semiconductors

2. Very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH4-PH3-H2Reactants for Bipolar Devices

3. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

4. Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing

5. D. Muto, T. Seino, T. Matsuura, J. Murota, in: Proceedings of the AVS 48th International Symposium, EL-WeA3, San Francisco, California, 29 October–2 November 2001, p. 179.

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