Surface and interface electronic properties of group III-nitride heterostructures-Reference-Cited by-同舟云学术

Surface and interface electronic properties of group III-nitride heterostructures

Published:2002-05 Issue:1-4 Volume:190 Page:311-317
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rizzi Angela

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. The 2000 Nobel Physics Prize—Press Release and Nobel Lectures. http://www.nobel.se/physics/laureates/2000/. See also H. Kroemer, Surf. Sci. 132 (1983) 543–576.

2. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin, 1997.

3. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

4. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

5. Reports for the ONR Multidisciplinary University Research Initiative (MURI) for High Power, Linear, Broadband Solid State Amplifiers at http://www.iiiv.cornell.edu/www/schaff/muri/reports/.

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