Deposition and characterization of Ge–Sb–Te layers for applications in optical data storage-Reference-Cited by-同舟云学术

Deposition and characterization of Ge–Sb–Te layers for applications in optical data storage

Published:2001-07 Issue:1-4 Volume:179 Page:55-60
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kyrsta S,Cremer R,Neuschütz D,Laurenzis M,Haring Bolivar P,Kurz H

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference6 articles.

1. N. Yamada, MRS Bull. (1996) 48.

2. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase

3. Free carrier absorption in the Ge:Sb:Te system

4. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

5. R. Cremer, M. Witthaut, D. Neuschütz, C. Trappe, S. Facsko, H. Kurz, in: P. Vincenzini (Ed.), Ceramics: Getting into the 2000s, Part E, ISBN 88-86538-18-9.

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