Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures-Reference-Cited by-同舟云学术

Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures

Published:2002-05 Issue:1-4 Volume:190 Page:403-407
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Horváth Zs.J.,Jarrendähl K.,Ádám M.,Szabó I.,Van Tuyen Vo,Czigány Zs.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition

2. Annealing induced interdiffusion and crystallization in sputtered amorphous Si/Ge multilayers

3. Zs.J. Horváth, M. Ádám, Vo Van Tuyen, unpublished.

4. Zs.J. Horváth, in: V. Kumar, S.K. Agarwal (Eds.), Physics of Semiconductor Devices, Narosa Publishing House, New Delhi, India, 1998, p. 1085.

5. Zs.J. Horváth, Vo Van Tuyen, in: I. Sorli, S. Amon, M. Kosec (Eds.), Proceedings of the 24th International Conference on Microelectronics (MIEL’96) and 32nd Symposium on Devices and Materials (SD’96), Nova Gorica, Slovenia, 25–27 September 1996, MIDEM, Ljubljana, Slovenia, 1996, p. 371.

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